All MOSFET. MTB14A03V8 Datasheet

 

MTB14A03V8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB14A03V8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
   Package: DFN3X3

 MTB14A03V8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB14A03V8 Datasheet (PDF)

 ..1. Size:351K  cystek
 mtb14a03v8.pdf

MTB14A03V8 MTB14A03V8

Spec. No. : C397V8 Issued Date : 2013.08.16 CYStech Electronics Corp.Revised Date : 2013.09.26 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB14A03V8ID 8.5A11.2m VGS=10V, ID=6A RDSON(TYP) 16m VGS=4.5V, ID=4A Description The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the desi

 9.1. Size:171K  cystek
 mtb14p03q8.pdf

MTB14A03V8 MTB14A03V8

Spec. No. : C452Q8 Issued Date : 2009.05.13 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTB14P03Q8 ID -12ARDSON(max) 14m Description The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

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History: MSQ2N60 | AO4722 | SWT38N65K2 | SM66406D1RL | STI40N65M2

 

 
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