MTB14A03V8 Specs and Replacement
Type Designator: MTB14A03V8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
Package: DFN3X3
MTB14A03V8 substitution
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MTB14A03V8 datasheet
mtb14a03v8.pdf
Spec. No. C397V8 Issued Date 2013.08.16 CYStech Electronics Corp. Revised Date 2013.09.26 Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB14A03V8 ID 8.5A 11.2m VGS=10V, ID=6A RDSON(TYP) 16m VGS=4.5V, ID=4A Description The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the desi... See More ⇒
mtb14p03q8.pdf
Spec. No. C452Q8 Issued Date 2009.05.13 CYStech Electronics Corp. Revised Date Page No. 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTB14P03Q8 ID -12A RDSON(max) 14m Description The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost ... See More ⇒
Detailed specifications: MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, AO3401, MTB14P03Q8, MTB15P04J3, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3
Keywords - MTB14A03V8 MOSFET specs
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