All MOSFET. MTB1K6N06KS6R Datasheet

 

MTB1K6N06KS6R Datasheet and Replacement


   Type Designator: MTB1K6N06KS6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 4.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT-363
 

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MTB1K6N06KS6R Datasheet (PDF)

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MTB1K6N06KS6R

Spec. No. : C974S6R Issued Date : 2014.07.21 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode MTB1K6N06KS6R Features N-MOS with ESD Gate Protection N-MOS with Low On-Resistance Low VF Schottky Diode Low Static, Switching and Conduction Losses Pb-free lead plating and halogen-fr

Datasheet: MTB14P03Q8 , MTB15P04J3 , MTB16P04J3 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 , MTB1D7N03ATH8 , MTB1D7N03E3 , 12N60 , MTB20A03Q8 , MTB20C03J4 , MTB20N03AQ8 , MTB20N03Q8 , MTB20N06J3 , MTB20P03L3 , MTB22N04J3 , MTB23C04J4 .

History: AP9575GH-HF

Keywords - MTB1K6N06KS6R MOSFET datasheet

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