MTB1K6N06KS6R Specs and Replacement

Type Designator: MTB1K6N06KS6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 4.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT-363

MTB1K6N06KS6R substitution

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MTB1K6N06KS6R datasheet

 ..1. Size:291K  cystek
 mtb1k6n06ks6r.pdf pdf_icon

MTB1K6N06KS6R

Spec. No. C974S6R Issued Date 2014.07.21 CYStech Electronics Corp. Revised Date Page No. 1/ 10 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode MTB1K6N06KS6R Features N-MOS with ESD Gate Protection N-MOS with Low On-Resistance Low VF Schottky Diode Low Static, Switching and Conduction Losses Pb-free lead plating and halogen-fr... See More ⇒

Detailed specifications: MTB14P03Q8, MTB15P04J3, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3, 12N60, MTB20A03Q8, MTB20C03J4, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3, MTB22N04J3, MTB23C04J4

Keywords - MTB1K6N06KS6R MOSFET specs

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