MTB22N04J3 Specs and Replacement

Type Designator: MTB22N04J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

MTB22N04J3 substitution

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MTB22N04J3 datasheet

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 mtb22n04j3.pdf pdf_icon

MTB22N04J3

Spec. No. C594J3 Issued Date 2010.04.19 CYStech Electronics Corp. Revised Date Page No. 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB22N04J3 ID 15A 22m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB22N04J3 TO-252 G D S G Gate D Drain S S... See More ⇒

Detailed specifications: MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8, MTB20C03J4, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3, NCEP15T14, MTB23C04J4, MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.