MTB24B03Q8 Specs and Replacement

Type Designator: MTB24B03Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.1 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP-8

MTB24B03Q8 substitution

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MTB24B03Q8 datasheet

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 mtb24b03q8.pdf pdf_icon

MTB24B03Q8

Spec. No. C587Q8 Issued Date 2011.01.27 CYStech Electronics Corp. Revised Date 2012.10.26 Page No. 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB24B03Q8 ID -8A 18m (typ.) RDSON(MAX)@VGS=-10V, ID=-8A 27m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-6A Description The MTB24B03Q8 provides the designer with the best combination of fast switching, r... See More ⇒

Detailed specifications: MTB20A03Q8, MTB20C03J4, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3, MTB22N04J3, MTB23C04J4, STP80NF70, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, MTB30P06J3

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