FSF254D Datasheet. Specs and Replacement

Type Designator: FSF254D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO254AA

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FSF254D datasheet

 8.1. Size:54K  intersil
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FSF254D

FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 18A, 250V, rDS(ON) = 0.170 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD ... See More ⇒

 9.1. Size:53K  intersil
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FSF254D

FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD ... See More ⇒

Detailed specifications: FRX130R3, FRX130R4, FSF055D, FSF055R, FSF150D, FSF150R, FSF250D, FSF250R, IRF9640, FSF254R, FSF450D, FSF450R, FSF9150D, FSF9150R, FSF9250D, FSF9250R, FSJ055D

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