MTB35N04J3 Specs and Replacement

Type Designator: MTB35N04J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-252

MTB35N04J3 substitution

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MTB35N04J3 datasheet

 ..1. Size:259K  cystek
 mtb35n04j3.pdf pdf_icon

MTB35N04J3

Spec. No. C453J3 Issued Date 2009.03.11 CYStech Electronics Corp. Revised Date Page No. 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB35N04J3 ID 12A 35m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB35N04J3 TO-252 G D S G Gate D Drain S S... See More ⇒

 7.1. Size:104K  motorola
 mtb35n06zl.pdf pdf_icon

MTB35N04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB35N06ZL/D Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 35 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 26 m withstand high energy in the avalanche mode and switch efficiently.... See More ⇒

Detailed specifications: MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, MTB30P06J3, 10N65, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.