Spec. No. : C453J3 Issued Date : 2009.03.11 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB35N04J3 ID 12A35m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB35N04J3 TO-252 G D S GGate DDrain SS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB35N06ZL/DProduct PreviewMTB35N06ZLHDTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 26 mwithstand high energy in the avalanche mode and switch efficiently.