MTB45A06Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB45A06Q8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 86
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
SOP-8
MTB45A06Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB45A06Q8
Datasheet (PDF)
..1. Size:338K cystek
mtb45a06q8.pdf
Spec. No. : C713Q8 Issued Date : 2009.06.02 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB45A06Q8 ID 6ARDSON(MAX.) 45m Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
9.1. Size:357K cystek
mtb45p03q8.pdf
Spec. No. : C783Q8 Issued Date : 2011.05.04 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTB45P03Q8 ID -6ARDSON(MAX) 45m Description The MTB45P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o
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