MTB45A06Q8 Specs and Replacement

Type Designator: MTB45A06Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOP-8

MTB45A06Q8 substitution

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MTB45A06Q8 datasheet

 ..1. Size:338K  cystek
 mtb45a06q8.pdf pdf_icon

MTB45A06Q8

Spec. No. C713Q8 Issued Date 2009.06.02 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB45A06Q8 ID 6A RDSON(MAX.) 45m Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. ... See More ⇒

 9.1. Size:357K  cystek
 mtb45p03q8.pdf pdf_icon

MTB45A06Q8

Spec. No. C783Q8 Issued Date 2011.05.04 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB45P03Q8 ID -6A RDSON(MAX) 45m Description The MTB45P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o... See More ⇒

Detailed specifications: MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, IRF2807, MTB45P03Q8, MTB4D0N03ATH8, MTB4D0N03ATV8, MTB55N03J3, MTB55N03N3, MTB55N06Q8, MTB55N10J3, MTB55N10Q8

Keywords - MTB45A06Q8 MOSFET specs

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