MTB45P03Q8 Datasheet and Replacement
Type Designator: MTB45P03Q8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SOP-8
MTB45P03Q8 substitution
MTB45P03Q8 Datasheet (PDF)
mtb45p03q8.pdf

Spec. No. : C783Q8 Issued Date : 2011.05.04 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTB45P03Q8 ID -6ARDSON(MAX) 45m Description The MTB45P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o
mtb45a06q8.pdf

Spec. No. : C713Q8 Issued Date : 2009.06.02 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB45A06Q8 ID 6ARDSON(MAX.) 45m Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Datasheet: MTB3D0N03ATH8 , MTB40N06E3 , MTB40P04J3 , MTB40P06J3 , MTB40P06Q8 , MTB40P06V8 , MTB44P04J3 , MTB45A06Q8 , IRF2807 , MTB4D0N03ATH8 , MTB4D0N03ATV8 , MTB55N03J3 , MTB55N03N3 , MTB55N06Q8 , MTB55N10J3 , MTB55N10Q8 , MTB600N03N3 .
History: SUM90N08-7M6P | MTB08N04J3 | MTB070N11J3 | 2SK1006-01MR | MTB06N03J3 | PMFPB6545UP | OSG65R260FSF
Keywords - MTB45P03Q8 MOSFET datasheet
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History: SUM90N08-7M6P | MTB08N04J3 | MTB070N11J3 | 2SK1006-01MR | MTB06N03J3 | PMFPB6545UP | OSG65R260FSF



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