MTB45P03Q8 Specs and Replacement
Type Designator: MTB45P03Q8
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SOP-8
MTB45P03Q8 substitution
- MOSFET ⓘ Cross-Reference Search
MTB45P03Q8 datasheet
mtb45p03q8.pdf
Spec. No. C783Q8 Issued Date 2011.05.04 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB45P03Q8 ID -6A RDSON(MAX) 45m Description The MTB45P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o... See More ⇒
mtb45a06q8.pdf
Spec. No. C713Q8 Issued Date 2009.06.02 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB45A06Q8 ID 6A RDSON(MAX.) 45m Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. ... See More ⇒
Detailed specifications: MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, STF13NM60N, MTB4D0N03ATH8, MTB4D0N03ATV8, MTB55N03J3, MTB55N03N3, MTB55N06Q8, MTB55N10J3, MTB55N10Q8, MTB600N03N3
Keywords - MTB45P03Q8 MOSFET specs
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