MTB80N08J3 Specs and Replacement

Type Designator: MTB80N08J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0596 Ohm

Package: TO-252

MTB80N08J3 substitution

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MTB80N08J3 datasheet

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 mtb80n08j3.pdf pdf_icon

MTB80N08J3

Spec. No. C909J3 Issued Date 2013.04.01 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 80V MTB80N08J3 ID 15A RDS(ON)@VGS=10V, ID=15A 59.6 m (typ) RDS(ON)@VGS=4.5V, ID=10A 60.5 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ... See More ⇒

Detailed specifications: MTB60B06Q8, MTB60N06J3, MTB60N06L3, MTB60P06E3, MTB60P06H8, MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, K2611, MTB90P06J3, MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8

Keywords - MTB80N08J3 MOSFET specs

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