All MOSFET. MTB80N08J3 Datasheet

 

MTB80N08J3 Datasheet and Replacement


   Type Designator: MTB80N08J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0596 Ohm
   Package: TO-252
 

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MTB80N08J3 Datasheet (PDF)

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MTB80N08J3

Spec. No. : C909J3 Issued Date : 2013.04.01 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 80VMTB80N08J3 ID 15ARDS(ON)@VGS=10V, ID=15A 59.6 m(typ)RDS(ON)@VGS=4.5V, ID=10A 60.5 m(typ)Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

Datasheet: MTB60B06Q8 , MTB60N06J3 , MTB60N06L3 , MTB60P06E3 , MTB60P06H8 , MTB6D0N03AH8 , MTB6D0N03ATH8 , MTB6D0N03ATV8 , IRF9640 , MTB90P06J3 , MTB90P06Q8 , MTBA0N10Q8 , MTBA5C10AQ8 , MTBA5C10Q8 , MTBA5N10FP , MTBA5N10J3 , MTBA5N10Q8 .

History: STB270N4F3 | IRFR3711ZC

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