MTB90P06Q8 Specs and Replacement

Type Designator: MTB90P06Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V

Qg ⓘ - Total Gate Charge: 14 nC

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: SOP-8

MTB90P06Q8 substitution

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MTB90P06Q8 datasheet

 ..1. Size:338K  cystek
 mtb90p06q8.pdf pdf_icon

MTB90P06Q8

Spec. No. C733Q8 Issued Date 2011.03.30 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB90P06Q8 ID -5A RDSON@VGS=-10V, ID=-5A 69 m typ. RDSON@VGS=-4.5V, ID=-3A 92 m typ. Description The MTB90P06Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combina... See More ⇒

 6.1. Size:280K  cystek
 mtb90p06j3.pdf pdf_icon

MTB90P06Q8

Spec. No. C733J3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -12A 70 m (typ) RDSON@VGS=-10V, ID=-10A 90 m (typ) RDSON@VGS=-5V, ID=-8A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free packa... See More ⇒

Detailed specifications: MTB60N06L3, MTB60P06E3, MTB60P06H8, MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3, RU7088R, MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8

Keywords - MTB90P06Q8 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.