All MOSFET. MTBA0N10Q8 Datasheet

 

MTBA0N10Q8 Datasheet and Replacement


   Type Designator: MTBA0N10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOP-8
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MTBA0N10Q8 Datasheet (PDF)

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MTBA0N10Q8

Spec. No. : C790Q8 Issued Date : 2010.07.23 CYStech Electronics Corp.Revised Date : 2012.05.07 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA0N10Q8ID 5ARDS(ON)@VGS=10V, ID=5A 90m(typ) RDS(ON)@VGS=4.5V, ID=3A 94m(typ) Description The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinatio

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SM7341EHKP | 2SK1994 | SVS11N60FD2 | LSE55R140GF | SFP2955 | PB555BA | RSF014N03

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