All MOSFET. MTBA0N10Q8 Datasheet

 

MTBA0N10Q8 Datasheet and Replacement


   Type Designator: MTBA0N10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOP-8
 

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MTBA0N10Q8 Datasheet (PDF)

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MTBA0N10Q8

Spec. No. : C790Q8 Issued Date : 2010.07.23 CYStech Electronics Corp.Revised Date : 2012.05.07 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA0N10Q8ID 5ARDS(ON)@VGS=10V, ID=5A 90m(typ) RDS(ON)@VGS=4.5V, ID=3A 94m(typ) Description The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinatio

Datasheet: MTB60P06E3 , MTB60P06H8 , MTB6D0N03AH8 , MTB6D0N03ATH8 , MTB6D0N03ATV8 , MTB80N08J3 , MTB90P06J3 , MTB90P06Q8 , 2N7002 , MTBA5C10AQ8 , MTBA5C10Q8 , MTBA5N10FP , MTBA5N10J3 , MTBA5N10Q8 , MTBA5N10V8 , MTBA5Q10Q8 , MTBA6C12J4 .

History: DMC4050SSD | MTB1D7N03E3 | RF1S30N06LESM | MTDN1034C6 | SI6968BEDQ | SSF60R280SFD

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