MTBA0N10Q8 Specs and Replacement

Type Designator: MTBA0N10Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOP-8

MTBA0N10Q8 substitution

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MTBA0N10Q8 datasheet

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 mtba0n10q8.pdf pdf_icon

MTBA0N10Q8

Spec. No. C790Q8 Issued Date 2010.07.23 CYStech Electronics Corp. Revised Date 2012.05.07 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA0N10Q8 ID 5A RDS(ON)@VGS=10V, ID=5A 90m (typ) RDS(ON)@VGS=4.5V, ID=3A 94m (typ) Description The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinatio... See More ⇒

Detailed specifications: MTB60P06E3, MTB60P06H8, MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3, MTB90P06Q8, MMIS60R580P, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4

Keywords - MTBA0N10Q8 MOSFET specs

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