MTBA6C12J4 Specs and Replacement

Type Designator: MTBA6C12J4

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8(6.8) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.2(17) nS

Cossⓘ - Output Capacitance: 29(48) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.176(0.246) Ohm

Package: TO-252-4L

MTBA6C12J4 substitution

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MTBA6C12J4 datasheet

 ..1. Size:397K  cystek
 mtba6c12j4.pdf pdf_icon

MTBA6C12J4

Spec. No. C973J4 Issued Date 2014.06.13 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTBA6C12J4 BVDSS 120V -120V ID @ VGS=10V(-10V) 2A -1.6A RDSON(typ.) @VGS=(-)10V 176 m 246 m RDSON(typ.) @VGS=(-)4.5V 183 m 276 m Features Low Gate Charge Simple Drive Requirement RoHS compliant ... See More ⇒

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 mtba6c12q8.pdf pdf_icon

MTBA6C12J4

Spec. No. C973Q8 Issued Date 2014.09.23 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA6C12Q8 BVDSS 120V -120V ID @ VGS=10V(-10V) 2A -1.7A RDSON(typ.) @VGS=(-)10V 178 m 246 m RDSON(typ.) @VGS=(-)4.5V 185 m 276 m Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhanc... See More ⇒

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 mtba6c15q8.pdf pdf_icon

MTBA6C12J4

Spec. No. C938Q8 Issued Date 2014.12.01 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA6C15Q8 BVDSS 150V -150V ID @ TA=25 C, VGS=10V(-10V) 1.8A -1.5A ID @ TA=70 C, VGS=10V(-10V) 1.5A -1.3A ID @ TC=25 C, VGS=10V(-10V) 3.2A -2.6A ID @ TC=100 C, VGS=10V(-10V) 2.3A -1.8A RDSON(typ.) @VGS=(-)10V ... See More ⇒

 7.2. Size:402K  cystek
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MTBA6C12J4

Spec. No. C938J4 Issued Date 2014.10.15 CYStech Electronics Corp. Revised Date 2014.10.28 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTBA6C15J4 BVDSS 150V -150V ID @VGS=10V(-10V) 9.3A -7.1A RDSON(TYP)@VGS=10V(-10V) 167m 253m Features RDSON(TYP)@VGS=4.5V(-4.5V) 172m 273m Low gate charge Simple drive requirement Pb-f... See More ⇒

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Detailed specifications: MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, IRF3205, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8

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