MTBA6C12J4 - параметры транзистора MOSFET, его аналоги, datasheet

MTBA6C12J4 Datasheet (PDF)

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Spec. No. : C973J4 Issued Date : 2014.06.13 CYStech Electronics Corp. Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C12J4 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.6ARDSON(typ.) @VGS=(-)10V 176 m 246 m RDSON(typ.) @VGS=(-)4.5V 183 m 276 m Features Low Gate Charge Simple Drive Requirement RoHS compliant

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Spec. No. : C973Q8 Issued Date : 2014.09.23 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C12Q8 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.7ARDSON(typ.) @VGS=(-)10V 178 m 246 m RDSON(typ.) @VGS=(-)4.5V 185 m 276 m Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhanc

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Spec. No. : C938Q8 Issued Date : 2014.12.01 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C15Q8 BVDSS 150V -150VID @ TA=25C, VGS=10V(-10V) 1.8A -1.5AID @ TA=70C, VGS=10V(-10V) 1.5A -1.3AID @ TC=25C, VGS=10V(-10V) 3.2A -2.6AID @ TC=100C, VGS=10V(-10V) 2.3A -1.8ARDSON(typ.) @VGS=(-)10V

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Spec. No. : C938J4 Issued Date : 2014.10.15 CYStech Electronics Corp.Revised Date : 2014.10.28 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C15J4 BVDSS 150V -150VID @VGS=10V(-10V) 9.3A -7.1ARDSON(TYP)@VGS=10V(-10V) 167m 253m Features RDSON(TYP)@VGS=4.5V(-4.5V) 172m 273m Low gate charge Simple drive requirement Pb-f

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .