All MOSFET. MTBC7N10N3 Datasheet

 

MTBC7N10N3 Datasheet and Replacement


   Type Designator: MTBC7N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.389 Ohm
   Package: SOT-23
 

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MTBC7N10N3 Datasheet (PDF)

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MTBC7N10N3

Spec. No. : C886N3 Issued Date : 2012.11.14 CYStech Electronics Corp.Revised Date : Page No. : 1/9 100V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 100VMTBC7N10N3 ID 1ARDSON(TYP)@VGS=10V, ID=1A 389m RDSON(TYP)@VGS=4.5V, ID=1A 413m RDSON(TYP)@VGS=4V, ID=1A 407m Features Lower gate charge. ESD protected. Pb-free lead plating and Halogen-fre

Datasheet: MTBA5N10Q8 , MTBA5N10V8 , MTBA5Q10Q8 , MTBA6C12J4 , MTBB0P10J3 , MTBB0P10L3 , MTBB5B10Q8 , MTBB5N10L3 , IRF540N , MTC1016S6R , MTC2402Q8 , MTC2590V8 , MTC2804Q8 , MTC3585G6 , MTC3585N6 , MTC3586DFA6 , MTC380Q8 .

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