MTBC7N10N3 Specs and Replacement
Type Designator: MTBC7N10N3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.389 Ohm
Package: SOT-23
MTBC7N10N3 substitution
- MOSFET ⓘ Cross-Reference Search
MTBC7N10N3 datasheet
mtbc7n10n3.pdf
Spec. No. C886N3 Issued Date 2012.11.14 CYStech Electronics Corp. Revised Date Page No. 1/9 100V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 100V MTBC7N10N3 ID 1A RDSON(TYP)@VGS=10V, ID=1A 389m RDSON(TYP)@VGS=4.5V, ID=1A 413m RDSON(TYP)@VGS=4V, ID=1A 407m Features Lower gate charge. ESD protected. Pb-free lead plating and Halogen-fre... See More ⇒
Detailed specifications: MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, IRF540, MTC1016S6R, MTC2402Q8, MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8
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