MTC1016S6R MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTC1016S6R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 0.82(0.57) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.79 nC
   trⓘ - Rise Time: 6(10) nS
   Cossⓘ - Output Capacitance: 12.3(16.6) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.61) Ohm
   Package: SOT-363R

MTC1016S6R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS