All MOSFET. MTC1016S6R Datasheet

 

MTC1016S6R Datasheet and Replacement


   Type Designator: MTC1016S6R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.82(0.57) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6(10) nS
   Cossⓘ - Output Capacitance: 12.3(16.6) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.61) Ohm
   Package: SOT-363R
 

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MTC1016S6R Datasheet (PDF)

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MTC1016S6R

Spec. No. : C392S6R Issued Date : 2013.08.01 CYStech Electronics Corp. Revised Date : 2018.10.24 Page No. : 1/ 13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC1016S6R BVDSS 20V -20V ID @VGS=(-)4.5V, TA=25C 0.82A -0.57A RDSON(typ.) @VGS=(-)4.5V 0.30 0.61 RDSON(typ.) @VGS=(-)2.5V 0.43 1.00 RDSON(typ.) @VGS=(-)1.8V 0.63 1.64 Features

Datasheet: MTBA5N10V8 , MTBA5Q10Q8 , MTBA6C12J4 , MTBB0P10J3 , MTBB0P10L3 , MTBB5B10Q8 , MTBB5N10L3 , MTBC7N10N3 , 50N06 , MTC2402Q8 , MTC2590V8 , MTC2804Q8 , MTC3585G6 , MTC3585N6 , MTC3586DFA6 , MTC380Q8 , MTC4501Q8 .

Keywords - MTC1016S6R MOSFET datasheet

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