MTC1016S6R Specs and Replacement
Type Designator: MTC1016S6R
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.82(0.57) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6(10) nS
Cossⓘ - Output Capacitance: 12.3(16.6) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.61) Ohm
Package: SOT-363R
MTC1016S6R substitution
- MOSFET ⓘ Cross-Reference Search
MTC1016S6R datasheet
mtc1016s6r.pdf
Spec. No. C392S6R Issued Date 2013.08.01 CYStech Electronics Corp. Revised Date 2018.10.24 Page No. 1/ 13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC1016S6R BVDSS 20V -20V ID @VGS=(-)4.5V, TA=25 C 0.82A -0.57A RDSON(typ.) @VGS=(-)4.5V 0.30 0.61 RDSON(typ.) @VGS=(-)2.5V 0.43 1.00 RDSON(typ.) @VGS=(-)1.8V 0.63 1.64 Features... See More ⇒
Detailed specifications: MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, 50N06, MTC2402Q8, MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8, MTC4501Q8
Keywords - MTC1016S6R MOSFET specs
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MTC1016S6R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
