All MOSFET. MTC2590V8 Datasheet

 

MTC2590V8 Datasheet and Replacement


   Type Designator: MTC2590V8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6(5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 55(6.4) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.038) Ohm
   Package: DFN3X3
 

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MTC2590V8 Datasheet (PDF)

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MTC2590V8

Spec. No. : C839V8 Issued Date : 2013.09.26 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC2590V8 BVDSS 30V -30VID 6A -5ARDSON(MAX.) 23m 50m Description The MTC2590V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t

Datasheet: MTBA6C12J4 , MTBB0P10J3 , MTBB0P10L3 , MTBB5B10Q8 , MTBB5N10L3 , MTBC7N10N3 , MTC1016S6R , MTC2402Q8 , IRFZ44 , MTC2804Q8 , MTC3585G6 , MTC3585N6 , MTC3586DFA6 , MTC380Q8 , MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 .

History: MTBB5N10L3

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