All MOSFET. MTC2590V8 Datasheet

 

MTC2590V8 Datasheet and Replacement


   Type Designator: MTC2590V8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6(5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 55(6.4) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.038) Ohm
   Package: DFN3X3
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MTC2590V8 Datasheet (PDF)

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MTC2590V8

Spec. No. : C839V8 Issued Date : 2013.09.26 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC2590V8 BVDSS 30V -30VID 6A -5ARDSON(MAX.) 23m 50m Description The MTC2590V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: P1306ED | CSD19534Q5A | 12N60L-T3P-T | BUZ10 | NP84N055EHE | MTC2402Q8 | IPW90R340C3

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