MTC2804Q8 Specs and Replacement
Type Designator: MTC2804Q8
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7(6) A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2(9.5) nS
Cossⓘ - Output Capacitance: 79(327) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.038) Ohm
Package: SOP-8
MTC2804Q8 substitution
- MOSFET ⓘ Cross-Reference Search
MTC2804Q8 datasheet
mtc2804q8.pdf
Spec. No. C438Q8 Issued Date 2009.02.11 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/11 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC2804Q8 BVDSS 40V -40V ID 7A -6A RDSON(max) 28m 44m Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the... See More ⇒
Detailed specifications: MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8, IRF640, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8, MTC4501Q8, MTC4503AQ8, MTC4503Q8, MTC4503Q8G
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