All MOSFET. MTC2804Q8 Datasheet

 

MTC2804Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTC2804Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7(6) A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.1 nC
   trⓘ - Rise Time: 7.2(9.5) nS
   Cossⓘ - Output Capacitance: 79(327) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.038) Ohm
   Package: SOP-8

 MTC2804Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTC2804Q8 Datasheet (PDF)

 ..1. Size:341K  cystek
 mtc2804q8.pdf

MTC2804Q8 MTC2804Q8

Spec. No. : C438Q8 Issued Date : 2009.02.11 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/11 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC2804Q8 BVDSS 40V -40VID 7A -6ARDSON(max) 28m 44mDescription The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the

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