All MOSFET. MTC2804Q8 Datasheet

 

MTC2804Q8 Datasheet and Replacement


   Type Designator: MTC2804Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7(6) A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.2(9.5) nS
   Cossⓘ - Output Capacitance: 79(327) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.038) Ohm
   Package: SOP-8
 

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MTC2804Q8 Datasheet (PDF)

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MTC2804Q8

Spec. No. : C438Q8 Issued Date : 2009.02.11 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/11 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC2804Q8 BVDSS 40V -40VID 7A -6ARDSON(max) 28m 44mDescription The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the

Datasheet: MTBB0P10J3 , MTBB0P10L3 , MTBB5B10Q8 , MTBB5N10L3 , MTBC7N10N3 , MTC1016S6R , MTC2402Q8 , MTC2590V8 , IRFP460 , MTC3585G6 , MTC3585N6 , MTC3586DFA6 , MTC380Q8 , MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 , MTC4503Q8G .

History: KMA3D6N20SA

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