All MOSFET. MTC380Q8 Datasheet

 

MTC380Q8 Datasheet and Replacement


   Type Designator: MTC380Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2(2.5) A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45(10) nS
   Cossⓘ - Output Capacitance: 53(56) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088(0.18) Ohm
   Package: SOP-8
 

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MTC380Q8 Datasheet (PDF)

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MTC380Q8

Spec. No. : C836Q8 Issued Date : 2012.06.25 CYStech Electronics Corp.Revised Date : Page No. : 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC380Q8 BVDSS 100V -100VID 3.2A -2.5ARDSON(typ.) @VGS=(-)10V 88m 180m RDSON(typ.) @VGS=(-)5V 91m 192m Description The MTC380Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a si

Datasheet: MTBC7N10N3 , MTC1016S6R , MTC2402Q8 , MTC2590V8 , MTC2804Q8 , MTC3585G6 , MTC3585N6 , MTC3586DFA6 , IRF630 , MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 , MTC4503Q8G , MTC4505Q8 , MTC4506J4 , MTC4506Q8 , MTC5806Q8 .

History: SJMN250R80ZP | IPI65R660CFD | KND4820B | RU60E25R | IPI90R1K2C3 | NCEP039N10M | SSM9926GEO

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