MTC380Q8 Specs and Replacement

Type Designator: MTC380Q8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2(2.5) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45(10) nS

Cossⓘ - Output Capacitance: 53(56) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088(0.18) Ohm

Package: SOP-8

MTC380Q8 substitution

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MTC380Q8 datasheet

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 mtc380q8.pdf pdf_icon

MTC380Q8

Spec. No. C836Q8 Issued Date 2012.06.25 CYStech Electronics Corp. Revised Date Page No. 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC380Q8 BVDSS 100V -100V ID 3.2A -2.5A RDSON(typ.) @VGS=(-)10V 88m 180m RDSON(typ.) @VGS=(-)5V 91m 192m Description The MTC380Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a si... See More ⇒

Detailed specifications: MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, IRF640N, MTC4501Q8, MTC4503AQ8, MTC4503Q8, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8

Keywords - MTC380Q8 MOSFET specs

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