All MOSFET. MTC5806Q8 Datasheet

 

MTC5806Q8 Datasheet and Replacement


   Type Designator: MTC5806Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5(3.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12(8) nS
   Cossⓘ - Output Capacitance: 45(49) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037(0.07) Ohm
   Package: SOP-8
 

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MTC5806Q8 Datasheet (PDF)

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MTC5806Q8

Spec. No. : C407Q8 Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date : 2012.06.26 Page No. : 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC5806Q8 BVDSS 60V -60VID 4.5A -3.5ARDSON(typ.) @VGS=(-)10V 37m 70m RDSON(typ.) @VGS=(-)4.5V 42m 93m Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in

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MTC5806Q8

Spec. No. : C407V8 Issued Date : 2014.11.10 CYStech Electronics Corp.Revised Date : age No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC5806V8 BVDSS 60V -60VID@VGS=10V(-10V), TA=25C 4.3A -3.3AID@VGS=10V(-10V), TC=25C 6.4A -4.6ARDSON@VGS=10V(-10V) typ. 37m 70m RDSON@VGS=4.5V(-4.5V) typ. 42m 93m Features Simple drive require

Datasheet: MTC380Q8 , MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 , MTC4503Q8G , MTC4505Q8 , MTC4506J4 , MTC4506Q8 , IRF9540 , MTC8402S6R , MTC8404V8 , MTC8958G6 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 , MTD120C10KQ8 , MTD140P15J3 .

History: SJMN088R65F

Keywords - MTC5806Q8 MOSFET datasheet

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