All MOSFET. MTC8402S6R Datasheet

 

MTC8402S6R Datasheet and Replacement


   Type Designator: MTC8402S6R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60(55) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3(0.18) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6(3) nS
   Cossⓘ - Output Capacitance: 4.2(4.6) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6(5) Ohm
   Package: SOT-363R
 

 MTC8402S6R substitution

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MTC8402S6R Datasheet (PDF)

 ..1. Size:377K  cystek
 mtc8402s6r.pdf pdf_icon

MTC8402S6R

Spec. No. : C888S6R Issued Date : 2012.12.24 CYStech Electronics Corp.Revised Date : 2013.03.05 Page No. : 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC8402S6R N-CH P-CHBVDSS 60V -50VID 0.3A -0.18AFeatures RDSON(typ.) @VGS=(-)10V 1.6 5 ESD protected RDSON(typ.) @VGS=(-)5V 1.8 6 High speed switching Low-voltage drive Pb-fr

 8.1. Size:410K  cystek
 mtc8404v8.pdf pdf_icon

MTC8402S6R

Spec. No. : C914V8 Issued Date : 2013.09.30 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC8404V8 BVDSS 30V -30VID 6A -6ARDSON(MAX.) 23m 28m Description The MTC8404V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t

Datasheet: MTC4501Q8 , MTC4503AQ8 , MTC4503Q8 , MTC4503Q8G , MTC4505Q8 , MTC4506J4 , MTC4506Q8 , MTC5806Q8 , P55NF06 , MTC8404V8 , MTC8958G6 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 , MTD120C10KQ8 , MTD140P15J3 , MTD30N10Q8 .

History: IPP45N06S4L-08 | PSMN4R3-30PL | OSG55R580AF | MTC8404V8 | IRFI830A | PMPB10UP

Keywords - MTC8402S6R MOSFET datasheet

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