MTC8402S6R Specs and Replacement

Type Designator: MTC8402S6R

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60(55) V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3(0.18) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6(3) nS

Cossⓘ - Output Capacitance: 4.2(4.6) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6(5) Ohm

Package: SOT-363R

MTC8402S6R substitution

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MTC8402S6R datasheet

 ..1. Size:377K  cystek
 mtc8402s6r.pdf pdf_icon

MTC8402S6R

Spec. No. C888S6R Issued Date 2012.12.24 CYStech Electronics Corp. Revised Date 2013.03.05 Page No. 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC8402S6R N-CH P-CH BVDSS 60V -50V ID 0.3A -0.18A Features RDSON(typ.) @VGS=(-)10V 1.6 5 ESD protected RDSON(typ.) @VGS=(-)5V 1.8 6 High speed switching Low-voltage drive Pb-fr... See More ⇒

 8.1. Size:410K  cystek
 mtc8404v8.pdf pdf_icon

MTC8402S6R

Spec. No. C914V8 Issued Date 2013.09.30 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC8404V8 BVDSS 30V -30V ID 6A -6A RDSON(MAX.) 23m 28m Description The MTC8404V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t... See More ⇒

Detailed specifications: MTC4501Q8, MTC4503AQ8, MTC4503Q8, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, P55NF06, MTC8404V8, MTC8958G6, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8

Keywords - MTC8402S6R MOSFET specs

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