All MOSFET. MTC8404V8 Datasheet

 

MTC8404V8 Datasheet and Replacement


   Type Designator: MTC8404V8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7(10) nS
   Cossⓘ - Output Capacitance: 55(119) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.021) Ohm
   Package: DFN3X3
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MTC8404V8 Datasheet (PDF)

 ..1. Size:410K  cystek
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MTC8404V8

Spec. No. : C914V8 Issued Date : 2013.09.30 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC8404V8 BVDSS 30V -30VID 6A -6ARDSON(MAX.) 23m 28m Description The MTC8404V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t

 8.1. Size:377K  cystek
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MTC8404V8

Spec. No. : C888S6R Issued Date : 2012.12.24 CYStech Electronics Corp.Revised Date : 2013.03.05 Page No. : 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC8402S6R N-CH P-CHBVDSS 60V -50VID 0.3A -0.18AFeatures RDSON(typ.) @VGS=(-)10V 1.6 5 ESD protected RDSON(typ.) @VGS=(-)5V 1.8 6 High speed switching Low-voltage drive Pb-fr

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History: TK2P60D | IRFBG20

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