MTC8404V8 Specs and Replacement
Type Designator: MTC8404V8
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7(10) nS
Cossⓘ - Output Capacitance: 55(119) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.021) Ohm
Package: DFN3X3
MTC8404V8 substitution
- MOSFET ⓘ Cross-Reference Search
MTC8404V8 datasheet
mtc8404v8.pdf
Spec. No. C914V8 Issued Date 2013.09.30 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC8404V8 BVDSS 30V -30V ID 6A -6A RDSON(MAX.) 23m 28m Description The MTC8404V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3 3 package, providing the designer with t... See More ⇒
mtc8402s6r.pdf
Spec. No. C888S6R Issued Date 2012.12.24 CYStech Electronics Corp. Revised Date 2013.03.05 Page No. 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC8402S6R N-CH P-CH BVDSS 60V -50V ID 0.3A -0.18A Features RDSON(typ.) @VGS=(-)10V 1.6 5 ESD protected RDSON(typ.) @VGS=(-)5V 1.8 6 High speed switching Low-voltage drive Pb-fr... See More ⇒
Detailed specifications: MTC4503AQ8, MTC4503Q8, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, 8205A, MTC8958G6, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8
Keywords - MTC8404V8 MOSFET specs
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