All MOSFET. MTD06N04Q8 Datasheet

 

MTD06N04Q8 Datasheet and Replacement


   Type Designator: MTD06N04Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOP-8
 

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MTD06N04Q8 Datasheet (PDF)

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MTD06N04Q8

Spec. No. : C892Q8 Issued Date : 2013.01.28 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTD06N04Q8 ID 15A6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTD06N04Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

Datasheet: MTC4505Q8 , MTC4506J4 , MTC4506Q8 , MTC5806Q8 , MTC8402S6R , MTC8404V8 , MTC8958G6 , MTC8958Q8 , IRF630 , MTD120C10KJ4 , MTD120C10KQ8 , MTD140P15J3 , MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP .

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