MTD06N04Q8 Specs and Replacement

Type Designator: MTD06N04Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOP-8

MTD06N04Q8 substitution

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MTD06N04Q8 datasheet

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 mtd06n04q8.pdf pdf_icon

MTD06N04Q8

Spec. No. C892Q8 Issued Date 2013.01.28 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTD06N04Q8 ID 15A 6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTD06N04Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching... See More ⇒

Detailed specifications: MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8, IRF630, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP

Keywords - MTD06N04Q8 MOSFET specs

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