MTD120C10KQ8 MOSFET: NP-Ch, 100V, 2.4(2.8)A. Full datasheet with pinout, specifications and replacement transistor list

MTD120C10KQ8 Datasheet (PDF)

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Spec. No. : C945Q8 Issued Date : 2014.01.03 CYStech Electronics Corp.Revised Date : 2015.03.10 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CHBVDSS 100V -100VID @ TA=25C, GS=10V(-10V) 2.4A -2.8AID @ TC=25C, GS=10V(-10V) 3.4A -3.9ARDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG

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Spec. No. : C945J4 Issued Date : 2014.02.12 CYStech Electronics Corp.Revised Date : 2014.06.13 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10KJ4 BVDSS 100V -100VID @ VGS=10V(-10V) 2A -2.4ARDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH

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Spec. No. : C986J4 Issued Date : 2014.12.05 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10J4 BVDSS 100V -100VID@VGS=10V(-10V), TC=25C 9.3A -12AID@VGS=10V(-10V), TA=25C 2.0A -2.5AFeatures 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require

9.1. Size:276K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD12N06EZL/DDesigner's Data SheetMTD12N06EZLTMOS E-FET.High Energy Power FETDPAK for Surface Mount orTMOS POWER FET12 AMPERESInsertion Mount60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.180 OHMThis advanced TMOS power FET is designed to withstand highenergy in the avalanche and mode

Datasheet: MTC4506Q8 , MTC5806Q8 , MTC8402S6R , MTC8404V8 , MTC8958G6 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 , AON7408 , MTD140P15J3 , MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP , MTDA4N20J3 , MTDE5P10N3 .