MTD120C10KQ8 Specs and Replacement

Type Designator: MTD120C10KQ8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4(2.8) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7(10) nS

Cossⓘ - Output Capacitance: 42(126) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.124(0.102) Ohm

Package: SOP-8

MTD120C10KQ8 substitution

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MTD120C10KQ8 datasheet

 ..1. Size:467K  cystek
 mtd120c10kq8.pdf pdf_icon

MTD120C10KQ8

Spec. No. C945Q8 Issued Date 2014.01.03 CYStech Electronics Corp. Revised Date 2015.03.10 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CH BVDSS 100V -100V ID @ TA=25 C, GS=10V(-10V) 2.4A -2.8A ID @ TC=25 C, GS=10V(-10V) 3.4A -3.9A RDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG... See More ⇒

 4.1. Size:398K  cystek
 mtd120c10kj4.pdf pdf_icon

MTD120C10KQ8

Spec. No. C945J4 Issued Date 2014.02.12 CYStech Electronics Corp. Revised Date 2014.06.13 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10KJ4 BVDSS 100V -100V ID @ VGS=10V(-10V) 2A -2.4A RDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH... See More ⇒

 5.1. Size:400K  cystek
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MTD120C10KQ8

Spec. No. C986J4 Issued Date 2014.12.05 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10J4 BVDSS 100V -100V ID@VGS=10V(-10V), TC=25 C 9.3A -12A ID@VGS=10V(-10V), TA=25 C 2.0A -2.5A Features 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require... See More ⇒

 9.1. Size:276K  motorola
 mtd12n06e.pdf pdf_icon

MTD120C10KQ8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode... See More ⇒

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Detailed specifications: MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, AON7408, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3

Keywords - MTD120C10KQ8 MOSFET specs

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 MTD120C10KQ8 replacement

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