MTD120C10KQ8 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTD120C10KQ8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.4(2.8) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 7(10) nS
   Cossⓘ - Output Capacitance: 42(126) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.124(0.102) Ohm
   Package: SOP-8

MTD120C10KQ8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS