MTD140P15J3 Specs and Replacement

Type Designator: MTD140P15J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.141 Ohm

Package: TO-252

MTD140P15J3 substitution

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MTD140P15J3 datasheet

 ..1. Size:310K  cystek
 mtd140p15j3.pdf pdf_icon

MTD140P15J3

Spec. No. C946J3 Issued Date 2014.02.17 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTD140P15J3 ID -15A RDS(ON)@VGS=-10V, ID=-12A 141m (typ) RDS(ON)@VGS=-4.5V, ID=-10A 175m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating a... See More ⇒

 9.1. Size:175K  motorola
 mtd14n10e.pdf pdf_icon

MTD140P15J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD14N10E/D Advance Information MTD14N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 14 AMPERES 100 VOLTS This advanced TMOS power FET is designed to withstand high RDS(on) = 0.11 W energy in the avalanche and c... See More ⇒

Detailed specifications: MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, 2SK3878, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R

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