All MOSFET. MTD140P15J3 Datasheet

 

MTD140P15J3 Datasheet and Replacement


   Type Designator: MTD140P15J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.141 Ohm
   Package: TO-252
 

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MTD140P15J3 Datasheet (PDF)

 ..1. Size:310K  cystek
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MTD140P15J3

Spec. No. : C946J3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150VMTD140P15J3 ID -15ARDS(ON)@VGS=-10V, ID=-12A 141m(typ) RDS(ON)@VGS=-4.5V, ID=-10A 175m(typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating a

 9.1. Size:175K  motorola
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MTD140P15J3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD14N10E/DAdvance InformationMTD14N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 14 AMPERES100 VOLTSThis advanced TMOS power FET is designed to withstand highRDS(on) = 0.11 Wenergy in the avalanche and c

Datasheet: MTC5806Q8 , MTC8402S6R , MTC8404V8 , MTC8958G6 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 , MTD120C10KQ8 , IRFP260 , MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP , MTDA4N20J3 , MTDE5P10N3 , MTDK1S6R .

History: MTBC7N10N3

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