MTD55N10Q8 Specs and Replacement

Type Designator: MTD55N10Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOP-8

MTD55N10Q8 substitution

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MTD55N10Q8 datasheet

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 mtd55n10q8.pdf pdf_icon

MTD55N10Q8

Spec. No. C898Q8 Issued Date 2013.04.19 CYStech Electronics Corp. Revised Date 2014.03.31 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTD55N10Q8 ID 4.9A VGS=10V, ID=4.5A 52m RDSON(TYP) VGS=6V, ID=4A 57m VGS=4.5V, ID=3A 73m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbo... See More ⇒

Detailed specifications: MTC8404V8, MTC8958G6, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, 2N7002, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, MTDK3S6R, MTDK5S6R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.