All MOSFET. MTD55N10Q8 Datasheet

 

MTD55N10Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTD55N10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOP-8

 MTD55N10Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTD55N10Q8 Datasheet (PDF)

 ..1. Size:372K  cystek
 mtd55n10q8.pdf

MTD55N10Q8 MTD55N10Q8

Spec. No. : C898Q8 Issued Date : 2013.04.19 CYStech Electronics Corp.Revised Date : 2014.03.31 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTD55N10Q8 ID 4.9AVGS=10V, ID=4.5A 52m RDSON(TYP) VGS=6V, ID=4A 57m VGS=4.5V, ID=3A 73m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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