All MOSFET. MTDK3S6R Datasheet

 

MTDK3S6R Datasheet and Replacement


   Type Designator: MTDK3S6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SOT-363
 

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MTDK3S6R Datasheet (PDF)

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MTDK3S6R

Spec. No. : C447S6R Issued Date : 2009.06.03 CYStech Electronics Corp.Revised Date : 2011.03.04 Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTDK3S6R RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTDK3S6R SOT-363 Tr1 Tr 2

Datasheet: MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP , MTDA4N20J3 , MTDE5P10N3 , MTDK1S6R , 2SK3568 , MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , MTDN6303S6R .

History: WSD90P06DN56 | IRF1503SPBF | SI3407DV-T1 | HAT2029RJ | IRFR9120 | WMM05N100C2 | SWI2N60DC

Keywords - MTDK3S6R MOSFET datasheet

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