MTDK3S6R Specs and Replacement

Type Designator: MTDK3S6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 7.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SOT-363

MTDK3S6R substitution

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MTDK3S6R datasheet

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 mtdk3s6r.pdf pdf_icon

MTDK3S6R

Spec. No. C447S6R Issued Date 2009.06.03 CYStech Electronics Corp. Revised Date 2011.03.04 Page No. 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mA MTDK3S6R RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTDK3S6R SOT-363 Tr1 Tr 2 ... See More ⇒

Detailed specifications: MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, 4435, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R

Keywords - MTDK3S6R MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.