All MOSFET. FSJ055D Datasheet

 

FSJ055D Datasheet and Replacement


   Type Designator: FSJ055D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO254AA
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FSJ055D Datasheet (PDF)

 8.1. Size:71K  intersil
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FSJ055D

FSJ055D, FSJ055RData Sheet October 1999 File Number 4250.570A, 60V, 0.012 Ohm, Radiation Hardened, FeaturesSEGR Resistant, N-Channel Power 70A, 60V, rDS(ON) = 0.012MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specifically Single Eventdesigned for

Datasheet: FSF254D , FSF254R , FSF450D , FSF450R , FSF9150D , FSF9150R , FSF9250D , FSF9250R , IRF840 , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D .

History: TK2P60D | IRFBG20

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