All MOSFET. MTDK5S6R Datasheet

 

MTDK5S6R Datasheet and Replacement


   Type Designator: MTDK5S6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 7.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: SOT-363
 

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MTDK5S6R Datasheet (PDF)

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MTDK5S6R

Spec. No. : C800S6R Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date : 2013.03.28 Page No. : 1/7 ESD protected Dual N-CHANNEL MOSFET BVDSS 30VMTDK5S6R ID 250mA1.3 VGS=4V, ID=10mA RDSON(TYP) 2.7 VGS=2.5V, ID=1mA Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. The MOSFET elements are independent, el

Datasheet: MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP , MTDA4N20J3 , MTDE5P10N3 , MTDK1S6R , MTDK3S6R , AON7410 , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , MTDN6303S6R , MTDN7002ZHS6R .

History: MTB06N03H8

Keywords - MTDK5S6R MOSFET datasheet

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