MTDK5S6R Specs and Replacement

Type Designator: MTDK5S6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 7.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: SOT-363

MTDK5S6R substitution

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MTDK5S6R datasheet

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MTDK5S6R

Spec. No. C800S6R Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.03.28 Page No. 1/7 ESD protected Dual N-CHANNEL MOSFET BVDSS 30V MTDK5S6R ID 250mA 1.3 VGS=4V, ID=10mA RDSON(TYP) 2.7 VGS=2.5V, ID=1mA Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. The MOSFET elements are independent, el... See More ⇒

Detailed specifications: MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, MTDK3S6R, SPP20N60C3, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R, MTDN7002ZHS6R

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