MTDN138ZS6R Specs and Replacement

Type Designator: MTDN138ZS6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 5.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: SOT-363

MTDN138ZS6R substitution

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MTDN138ZS6R datasheet

 ..1. Size:274K  cystek
 mtdn138zs6r.pdf pdf_icon

MTDN138ZS6R

Spec. No. C320S6R Issued Date 2012.08.17 CYStech Electronics Corp. Revised Date 2013.12.19 Page No. 1/ 7 N-Channel MOSFET (dual transistors) MTDN138ZS6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free p... See More ⇒

 9.1. Size:309K  cystek
 mtdn1034c6.pdf pdf_icon

MTDN138ZS6R

Spec. No. C833C6 Issued Date 2012.08.07 CYStech Electronics Corp. Revised Date 2013.08.27 Page No. 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN1034C6 BVDSS 30V ID 0.3A VGS=4.5V, ID=200mA 0.85 Features VGS=2.5V, ID=175mA 1.23 RDSON(TYP) High speed switching VGS=1.8V, ID=150mA 1.8 Low-voltage drive(1.5V) VGS=1.5V, ID=40mA 2.3 Easily desig... See More ⇒

Detailed specifications: MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, K4145, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R, MTDN7002ZHS6R, MTDN8233CDV8, MTDN8233X6

Keywords - MTDN138ZS6R MOSFET specs

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