MTDN3018S6R Specs and Replacement

Type Designator: MTDN3018S6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-363R

MTDN3018S6R substitution

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MTDN3018S6R datasheet

 ..1. Size:261K  cystek
 mtdn3018s6r.pdf pdf_icon

MTDN3018S6R

Spec. No. C320S6R Issued Date 2007.12.23 CYStech Electronics Corp. Revised Date 2011.03.04 Page No. 1/ 7 N-CHANNEL MOSFET (dual transistors) MTDN3018S6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package Equivalent Circuit... See More ⇒

 9.1. Size:351K  cystek
 mtdn3154c6.pdf pdf_icon

MTDN3018S6R

Spec. No. C915C6 Issued Date 2014.05.12 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN3154C6 BVDSS 20V ID 0.54A 0.30 VGS=4.5V, ID=540mA 0.55 RDSON(TYP) VGS=2.5V, ID=500mA Features 1.50 VGS=1.8V, ID=350mA High speed switching Low-voltage drive Easily designed drive circuits Easy to use... See More ⇒

Detailed specifications: MTDA0P10FP, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, 13N50, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R, MTDN7002ZHS6R, MTDN8233CDV8, MTDN8233X6, MTDN8810AT8

Keywords - MTDN3018S6R MOSFET specs

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