MTDN4228Q8 Specs and Replacement

Type Designator: MTDN4228Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOP-8

MTDN4228Q8 substitution

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MTDN4228Q8 datasheet

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 mtdn4228q8.pdf pdf_icon

MTDN4228Q8

Spec. No. C395Q8 Issued Date 2006.10.25 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN4228Q8 Description The MTDN4228Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a... See More ⇒

Detailed specifications: MTDE5P10N3, MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, 12N60, MTDN5820Z6, MTDN6303S6R, MTDN7002ZHS6R, MTDN8233CDV8, MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8

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