MTDN4228Q8 Datasheet and Replacement
Type Designator: MTDN4228Q8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOP-8
MTDN4228Q8 substitution
MTDN4228Q8 Datasheet (PDF)
mtdn4228q8.pdf

Spec. No. : C395Q8 Issued Date : 2006.10.25 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN4228Q8 Description The MTDN4228Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
Datasheet: MTDE5P10N3 , MTDK1S6R , MTDK3S6R , MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , 4N60 , MTDN5820Z6 , MTDN6303S6R , MTDN7002ZHS6R , MTDN8233CDV8 , MTDN8233X6 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 .
History: IPI120N08S4-03
Keywords - MTDN4228Q8 MOSFET datasheet
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History: IPI120N08S4-03



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