MTDN5820Z6 Specs and Replacement

Type Designator: MTDN5820Z6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TDFN2X5Z6

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MTDN5820Z6 datasheet

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 mtdn5820z6.pdf pdf_icon

MTDN5820Z6

Spec. No. C911Z6 Issued Date 2013.11.28 CYStech Electronics Corp. Revised Date Page No. 1/9 20V Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20V MTDN5820Z6 ID VGS=4.5V 11A 6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN5820Z6... See More ⇒

Detailed specifications: MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, 5N65, MTDN6303S6R, MTDN7002ZHS6R, MTDN8233CDV8, MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8

Keywords - MTDN5820Z6 MOSFET specs

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