All MOSFET. MTDN5820Z6 Datasheet

 

MTDN5820Z6 Datasheet and Replacement


   Type Designator: MTDN5820Z6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TDFN2X5Z6
 

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MTDN5820Z6 Datasheet (PDF)

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MTDN5820Z6

Spec. No. : C911Z6 Issued Date : 2013.11.28 CYStech Electronics Corp.Revised Date : Page No. : 1/9 20V Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN5820Z6 ID VGS=4.5V 11A6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN5820Z6

Datasheet: MTDK1S6R , MTDK3S6R , MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , 4435 , MTDN6303S6R , MTDN7002ZHS6R , MTDN8233CDV8 , MTDN8233X6 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 .

History: IPI120N08S4-03

Keywords - MTDN5820Z6 MOSFET datasheet

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