MTDN6303S6R Specs and Replacement

Type Designator: MTDN6303S6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: SOT-363R

MTDN6303S6R substitution

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MTDN6303S6R datasheet

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 mtdn6303s6r.pdf pdf_icon

MTDN6303S6R

Spec. No. C814S6R Issued Date 2012.05.15 CYStech Electronics Corp. Revised Date 2014.04.15 Page No. 1/ 8 N-CHANNEL MOSFET (dual transistors) BVDSS 20V MTDN6303S6R ID 760mA RDSON@VGS=4.5V, ID=600mA 370m (typ) RDSON@VGS=2.5V, ID=400mA 500m (typ) Features RDSON@VGS=1.8V, ID=350mA 1.1 (typ) Low on-resistance High ESD capability High speed switching... See More ⇒

Detailed specifications: MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, IRF1010E, MTDN7002ZHS6R, MTDN8233CDV8, MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8

Keywords - MTDN6303S6R MOSFET specs

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