All MOSFET. MTDN6303S6R Datasheet

 

MTDN6303S6R Datasheet and Replacement


   Type Designator: MTDN6303S6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.76 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SOT-363R
 

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MTDN6303S6R Datasheet (PDF)

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MTDN6303S6R

Spec. No. : C814S6R Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2014.04.15 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) BVDSS 20VMTDN6303S6R ID 760mARDSON@VGS=4.5V, ID=600mA 370m(typ) RDSON@VGS=2.5V, ID=400mA 500m(typ) Features RDSON@VGS=1.8V, ID=350mA 1.1 (typ) Low on-resistance High ESD capability High speed switching

Datasheet: MTDK3S6R , MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , IRF530 , MTDN7002ZHS6R , MTDN8233CDV8 , MTDN8233X6 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 .

History: IPG16N10S4L-61A | WMO4N65D1B | MTDN9926Q8 | UTD484 | N0302P | JCS9N90BT | SSM6H19NU

Keywords - MTDN6303S6R MOSFET datasheet

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