MTDN7002ZHS6R Specs and Replacement

Type Designator: MTDN7002ZHS6R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: SOT-363R

MTDN7002ZHS6R substitution

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MTDN7002ZHS6R datasheet

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 mtdn7002zhs6r.pdf pdf_icon

MTDN7002ZHS6R

Spec. No. C320S6R Issued Date 2007.11.07 CYStech Electronics Corp. Revised Date 2011.03.04 Page No. 1/ 7 N-CHANNEL MOSFET (dual transistors) MTDN7002ZHS6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package Equivalent Circ... See More ⇒

Detailed specifications: MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R, IRFB3607, MTDN8233CDV8, MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8

Keywords - MTDN7002ZHS6R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.