All MOSFET. MTDN7002ZHS6R Datasheet

 

MTDN7002ZHS6R Datasheet and Replacement


   Type Designator: MTDN7002ZHS6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: SOT-363R
 

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MTDN7002ZHS6R Datasheet (PDF)

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MTDN7002ZHS6R

Spec. No. : C320S6R Issued Date : 2007.11.07 CYStech Electronics Corp.Revised Date : 2011.03.04 Page No. : 1/ 7 N-CHANNEL MOSFET (dual transistors) MTDN7002ZHS6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package Equivalent Circ

Datasheet: MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , MTDN6303S6R , AON7506 , MTDN8233CDV8 , MTDN8233X6 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 , MTDN9971Q8 .

History: SE2303 | WMB60P02TS

Keywords - MTDN7002ZHS6R MOSFET datasheet

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