FSJ055R Specs and Replacement
Type Designator: FSJ055R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO254AA
FSJ055R substitution
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FSJ055R datasheet
fsj055.pdf
FSJ055D, FSJ055R Data Sheet October 1999 File Number 4250.5 70A, 60V, 0.012 Ohm, Radiation Hardened, Features SEGR Resistant, N-Channel Power 70A, 60V, rDS(ON) = 0.012 MOSFETs Total Dose The Discrete Products Operation of Intersil has developed a - Meets Pre-RAD Specifications to 100K RAD (Si) series of Radiation Hardened MOSFETs specifically Single Event designed for ... See More ⇒
Detailed specifications: FSF254R, FSF450D, FSF450R, FSF9150D, FSF9150R, FSF9250D, FSF9250R, FSJ055D, IRF540N, FSJ160D, FSJ160R, FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R
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