MTDNK2N6 Specs and Replacement

Type Designator: MTDNK2N6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 17.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: SOT-26

MTDNK2N6 substitution

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MTDNK2N6 datasheet

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MTDNK2N6

Spec. No. C446N6 CYStech Electronics Corp. Issued Date 2009.06.15 Revised Date 2013.09.06 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE MOSFET BVDSS 60V ID 0.51A MTDNK2N6 RDSON(MAX) 1.6 Description The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

Detailed specifications: MTDN8233X6, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, MTDN9973Q8, BS170, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, MTE040N20P3, MTE05N08E3

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