All MOSFET. MTDNK2N6 Datasheet

 

MTDNK2N6 Datasheet and Replacement


   Type Designator: MTDNK2N6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 17.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: SOT-26
 

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MTDNK2N6 Datasheet (PDF)

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MTDNK2N6

Spec. No. : C446N6 CYStech Electronics Corp. Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE MOSFET BVDSS 60VID 0.51AMTDNK2N6 RDSON(MAX) 1.6 Description The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Datasheet: MTDN8233X6 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 , MTDN9971Q8 , MTDN9973Q8 , BS170 , MTDP2004S6R , MTDP4953BDYQ8 , MTDP4953Q8 , MTDP9620T8 , MTE010N10E3 , MTE010N10FP , MTE040N20P3 , MTE05N08E3 .

History: IPP60R380C6 | GDSSF2300 | APT34F100L | IPA60R280CFD7 | H7N0405LM | SWN4N65DD | INK0103AC1

Keywords - MTDNK2N6 MOSFET datasheet

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