MTDP2004S6R Specs and Replacement

Type Designator: MTDP2004S6R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm

Package: SOT-363R

MTDP2004S6R substitution

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MTDP2004S6R datasheet

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 mtdp2004s6r.pdf pdf_icon

MTDP2004S6R

Spec. No. C698S6R Issued Date 2012.07.16 CYStech Electronics Corp. Revised Date 2018.10.24 Page No. 1/ 9 Dual P-CHANNEL MOSFET BVDSS -20V MTDP2004S6R ID@VGS=-4.5V, TA=25 C -500mA RDSON@VGS=-4.5V, ID=-430mA 0.64 (typ) RDSON@VGS=2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-10mA 1.7 (typ) Features Low on-resistance High ESD capability Hig... See More ⇒

Detailed specifications: MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, MTDN9973Q8, MTDNK2N6, 4N60, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, MTE040N20P3, MTE05N08E3, MTE05N10E3

Keywords - MTDP2004S6R MOSFET specs

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