All MOSFET. FSJ160D Datasheet

 

FSJ160D Datasheet and Replacement


   Type Designator: FSJ160D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO254AA
 

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FSJ160D Datasheet (PDF)

 8.1. Size:66K  intersil
 fsj160.pdf pdf_icon

FSJ160D

FSJ160D, FSJ160R70A, 100V, 0.022 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 70A, 100V, rDS(ON) = 0.022 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (

Datasheet: FSF450D , FSF450R , FSF9150D , FSF9150R , FSF9250D , FSF9250R , FSJ055D , FSJ055R , IRF540 , FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D .

History: RQ3E180AJ | P2004EV | DMS3015SSS

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