FSJ160D Datasheet and Replacement
Type Designator: FSJ160D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO254AA
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FSJ160D Datasheet (PDF)
fsj160.pdf

FSJ160D, FSJ160R70A, 100V, 0.022 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 70A, 100V, rDS(ON) = 0.022 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (
Datasheet: FSF450D , FSF450R , FSF9150D , FSF9150R , FSF9250D , FSF9250R , FSJ055D , FSJ055R , IRF540N , FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D .
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History: TK2P60D | IRFBG20



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