FSJ160D Specs and Replacement
Type Designator: FSJ160D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO254AA
FSJ160D substitution
- MOSFET ⓘ Cross-Reference Search
FSJ160D datasheet
fsj160.pdf
FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 70A, 100V, rDS(ON) = 0.022 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (... See More ⇒
Detailed specifications: FSF450D, FSF450R, FSF9150D, FSF9150R, FSF9250D, FSF9250R, FSJ055D, FSJ055R, IRF540, FSJ160R, FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R, FSJ9260D
Keywords - FSJ160D MOSFET specs
FSJ160D cross reference
FSJ160D equivalent finder
FSJ160D pdf lookup
FSJ160D substitution
FSJ160D replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
