MTDP4953BDYQ8 Specs and Replacement

Type Designator: MTDP4953BDYQ8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOP-8

MTDP4953BDYQ8 substitution

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MTDP4953BDYQ8 datasheet

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MTDP4953BDYQ8

Spec. No. C401Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO... See More ⇒

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MTDP4953BDYQ8

Spec. No. C402Q8 Issued Date 2006.06.15 CYStech Electronics Corp. Revised Date 2014.06.10 Page No. 1/8 Dual P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTDP4953Q8 ID -5.3A RDSON@VGS=-10V, ID=-5A 50m (typ) RDSON@VGS=-4.5V, ID=-4A 75m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and ... See More ⇒

Detailed specifications: MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, MTDN9973Q8, MTDNK2N6, MTDP2004S6R, IRFP250, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, MTE040N20P3, MTE05N08E3, MTE05N10E3, MTE130N20FP

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