All MOSFET. MTDP4953BDYQ8 Datasheet

 

MTDP4953BDYQ8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTDP4953BDYQ8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.7 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOP-8

 MTDP4953BDYQ8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTDP4953BDYQ8 Datasheet (PDF)

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 mtdp4953bdyq8.pdf

MTDP4953BDYQ8 MTDP4953BDYQ8

Spec. No. : C401Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO

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 mtdp4953q8.pdf

MTDP4953BDYQ8 MTDP4953BDYQ8

Spec. No. : C402Q8 Issued Date : 2006.06.15 CYStech Electronics Corp.Revised Date :2014.06.10 Page No. : 1/8 Dual P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTDP4953Q8 ID -5.3ARDSON@VGS=-10V, ID=-5A 50m(typ) RDSON@VGS=-4.5V, ID=-4A 75m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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