All MOSFET. MTE040N20P3 Datasheet

 

MTE040N20P3 Datasheet and Replacement


   Type Designator: MTE040N20P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 392 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0302 Ohm
   Package: TO-247
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MTE040N20P3 Datasheet (PDF)

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MTE040N20P3

Spec. No. : C872P3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE040N20P3 ID 50A RDS(ON)@VGS=10V, ID=28A 30.2m(typ) RDS(ON)@VGS=6V, ID=10A 29.3m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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