MTE040N20P3 Specs and Replacement

Type Designator: MTE040N20P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 392 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0302 Ohm

Package: TO-247

MTE040N20P3 substitution

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MTE040N20P3 datasheet

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 mte040n20p3.pdf pdf_icon

MTE040N20P3

Spec. No. C872P3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE040N20P3 ID 50A RDS(ON)@VGS=10V, ID=28A 30.2m (typ) RDS(ON)@VGS=6V, ID=10A 29.3m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MT... See More ⇒

Detailed specifications: MTDN9973Q8, MTDNK2N6, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, RFP50N06, MTE05N08E3, MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3, MTE13N08J3

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