MTE20N10FP Specs and Replacement

Type Designator: MTE20N10FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 32 nC

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-220FP

MTE20N10FP substitution

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MTE20N10FP datasheet

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MTE20N10FP

Spec. No. C883FP Issued Date 2012.11.15 CYStech Electronics Corp. Revised Date 2013.05.24 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE20N10FP ID 28A RDS(ON)@VGS=10V, ID=20A 18 m (typ) RDS(ON)@VGS=7V, ID=15A 20 m (typ) Description The MTE20N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fa... See More ⇒

Detailed specifications: MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3, MTE13N08J3, MTE1K0P15KN3, MTE1K8N25J3, MTE1K8N25KJ3, MTE1K8N25KM3, AO3400A, MTE50N10FP, MTE50N15FP, MTE50N15J3, MTE50N15Q8, MTE65N15FP, MTE65N15J3, MTE65N20F3, MTE65N20J3

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