All MOSFET. MTE20N10FP Datasheet

 

MTE20N10FP Datasheet and Replacement


   Type Designator: MTE20N10FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220FP
 

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MTE20N10FP Datasheet (PDF)

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MTE20N10FP

Spec. No. : C883FP Issued Date : 2012.11.15 CYStech Electronics Corp.Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE20N10FP ID 28ARDS(ON)@VGS=10V, ID=20A 18 m(typ) RDS(ON)@VGS=7V, ID=15A 20 m(typ) Description The MTE20N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fa

Datasheet: MTE130N20KF3 , MTE130N20KFP , MTE130N20KJ3 , MTE13N08J3 , MTE1K0P15KN3 , MTE1K8N25J3 , MTE1K8N25KJ3 , MTE1K8N25KM3 , RU6888R , MTE50N10FP , MTE50N15FP , MTE50N15J3 , MTE50N15Q8 , MTE65N15FP , MTE65N15J3 , MTE65N20F3 , MTE65N20J3 .

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