All MOSFET. MTE50N15Q8 Datasheet

 

MTE50N15Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE50N15Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOP-8

 MTE50N15Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE50N15Q8 Datasheet (PDF)

 ..1. Size:333K  cystek
 mte50n15q8.pdf

MTE50N15Q8 MTE50N15Q8

Spec. No. : C931Q8 Issued Date : 2014.03.24 CYStech Electronics Corp.Revised Date : 2014.06.24 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 150VMTE50N15Q8 ID @VGS=10V 7.7ARDS(ON)@VGS=10V, ID=5A 39 m(typ) RDS(ON)@VGS=8V, ID=5A 40 m(typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic

 6.1. Size:382K  cystek
 mte50n15j3.pdf

MTE50N15Q8 MTE50N15Q8

Spec. No. : C931J3 Issued Date : 2014.02.21 CYStech Electronics Corp.Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE50N15J3 ID 28ARDS(ON)@VGS=10V, ID=20A 39 m(typ) RDS(ON)@VGS=7V, ID=10A 39 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS com

 6.2. Size:299K  cystek
 mte50n15fp.pdf

MTE50N15Q8 MTE50N15Q8

Spec. No. : C931FP Issued Date : 2013.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE50N15FP ID 24ARDS(ON)@VGS=10V, ID=20A 39 m(typ) RDS(ON)@VGS=7V, ID=10A 39 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulatin

 7.1. Size:297K  cystek
 mte50n10fp.pdf

MTE50N15Q8 MTE50N15Q8

Spec. No. : C893FP Issued Date : 2013.05.27 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE50N10FP ID 23ARDS(ON)@VGS=10V, ID=15A 32 m(typ) RDS(ON)@VGS=6V, ID=10A 35 m(typ) Description The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BLP023N10-BA

 

 
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