All MOSFET. MTEA0N10J3 Datasheet

 

MTEA0N10J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTEA0N10J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
   Package: TO-252

 MTEA0N10J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTEA0N10J3 Datasheet (PDF)

 ..1. Size:265K  cystek
 mtea0n10j3.pdf

MTEA0N10J3 MTEA0N10J3

Spec. No. : C871J3 Issued Date : 2013.01.03 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTEA0N10J3 ID 16A83m VGS=10V, ID=12A RDSON(TYP) 100m VGS=6V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTEA0N10

 6.1. Size:366K  cystek
 mtea0n10q8.pdf

MTEA0N10J3 MTEA0N10J3

Spec. No. : C871Q8 Issued Date : 2014.06.30 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTEA0N10Q8ID 5.6ARDSON@VGS=10V, ID=4A 76m(typ) RDSON@VGS=5.5V, ID=3A 90m(typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and hal

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTD85N02R | 2SK876 | 2SK1381 | IRLML6344GT | TSP15N06A | SP8007

 

 
Back to Top