MTEA0N10J3 Specs and Replacement

Type Designator: MTEA0N10J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: TO-252

MTEA0N10J3 substitution

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MTEA0N10J3 datasheet

 ..1. Size:265K  cystek
 mtea0n10j3.pdf pdf_icon

MTEA0N10J3

Spec. No. C871J3 Issued Date 2013.01.03 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTEA0N10J3 ID 16A 83m VGS=10V, ID=12A RDSON(TYP) 100m VGS=6V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTEA0N10... See More ⇒

 6.1. Size:366K  cystek
 mtea0n10q8.pdf pdf_icon

MTEA0N10J3

Spec. No. C871Q8 Issued Date 2014.06.30 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTEA0N10Q8 ID 5.6A RDSON@VGS=10V, ID=4A 76m (typ) RDSON@VGS=5.5V, ID=3A 90m (typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and hal... See More ⇒

Detailed specifications: MTE50N10FP, MTE50N15FP, MTE50N15J3, MTE50N15Q8, MTE65N15FP, MTE65N15J3, MTE65N20F3, MTE65N20J3, IRF9640, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3

Keywords - MTEA0N10J3 MOSFET specs

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 MTEA0N10J3 replacement

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