All MOSFET. MTEA0N10Q8 Datasheet

 

MTEA0N10Q8 Datasheet and Replacement


   Type Designator: MTEA0N10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: SOP-8
 

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MTEA0N10Q8 Datasheet (PDF)

 ..1. Size:366K  cystek
 mtea0n10q8.pdf pdf_icon

MTEA0N10Q8

Spec. No. : C871Q8 Issued Date : 2014.06.30 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTEA0N10Q8ID 5.6ARDSON@VGS=10V, ID=4A 76m(typ) RDSON@VGS=5.5V, ID=3A 90m(typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and hal

 6.1. Size:265K  cystek
 mtea0n10j3.pdf pdf_icon

MTEA0N10Q8

Spec. No. : C871J3 Issued Date : 2013.01.03 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTEA0N10J3 ID 16A83m VGS=10V, ID=12A RDSON(TYP) 100m VGS=6V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTEA0N10

Datasheet: MTE50N15FP , MTE50N15J3 , MTE50N15Q8 , MTE65N15FP , MTE65N15J3 , MTE65N20F3 , MTE65N20J3 , MTEA0N10J3 , 8N60 , MTEA2N15L3 , MTEA2N15Q8 , MTEA6C15J4 , MTEA6C15Q8 , MTEB4N15J3 , MTEB6N20J3 , MTED6N25J3 , MTED6N25KJ3 .

Keywords - MTEA0N10Q8 MOSFET datasheet

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