MTEA2N15L3 Specs and Replacement

Type Designator: MTEA2N15L3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SOT-223

MTEA2N15L3 substitution

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MTEA2N15L3 datasheet

 ..1. Size:303K  cystek
 mtea2n15l3.pdf pdf_icon

MTEA2N15L3

Spec. No. C880L3 Issued Date 2012.10.03 CYStech Electronics Corp. Revised Date 2013.10.25 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTEA2N15L3 ID 3A RDSON@VGS=10V, ID=1.6A 125m (typ) RDSON@VGS=5.5V, ID=1A 141m (typ) Description The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast sw... See More ⇒

 6.1. Size:340K  cystek
 mtea2n15q8.pdf pdf_icon

MTEA2N15L3

Spec. No. C880Q8 Issued Date 2012.10.01 CYStech Electronics Corp. Revised Date 2014.06.25 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTEA2N15Q8 ID 4A RDSON@VGS=10V, ID=3.9A 122m (typ) RDSON@VGS=5.5V, ID=3.3A 140m (typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead ... See More ⇒

Detailed specifications: MTE50N15J3, MTE50N15Q8, MTE65N15FP, MTE65N15J3, MTE65N20F3, MTE65N20J3, MTEA0N10J3, MTEA0N10Q8, AON7403, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP

Keywords - MTEA2N15L3 MOSFET specs

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 MTEA2N15L3 replacement

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