FSJ260R Datasheet and Replacement
Type Designator: FSJ260R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO254AA
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FSJ260R Datasheet (PDF)
fsj260.pdf

FSJ260D, FSJ260R44A, 200V, 0.050 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 44A, 200V, rDS(ON) = 0.050 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military space- Meets Pre-RAD Specifications to 100K RAD (Si)appli
fsj264.pdf

FSJ264D, FSJ264R33A, 250V, 0.080 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 33A, 250V, rDS(ON) = 0.080 The Discrete Products Operation of Intersil has developed aseries of Radiation Hardened MOSFETs specifically Total Dosedesigned for commercial and military space applications.- Meets Pre-RAD Specifications to 100K RAD (Si)Enha
Datasheet: FSF9150R , FSF9250D , FSF9250R , FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , IRF640 , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , FSL110R .
History: DMN2300UFB4 | RTF020P02TL | DMN60H3D5SK3 | DMP2104LP | TK2P60D | IRFBG20
Keywords - FSJ260R MOSFET datasheet
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History: DMN2300UFB4 | RTF020P02TL | DMN60H3D5SK3 | DMP2104LP | TK2P60D | IRFBG20



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