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MTEA2N15Q8 Spec and Replacement


   Type Designator: MTEA2N15Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.122 Ohm
   Package: SOP-8

 MTEA2N15Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTEA2N15Q8 Specs

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mtea2n15q8.pdf pdf_icon

MTEA2N15Q8

Spec. No. C880Q8 Issued Date 2012.10.01 CYStech Electronics Corp. Revised Date 2014.06.25 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTEA2N15Q8 ID 4A RDSON@VGS=10V, ID=3.9A 122m (typ) RDSON@VGS=5.5V, ID=3.3A 140m (typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead ... See More ⇒

 6.1. Size:303K  cystek
mtea2n15l3.pdf pdf_icon

MTEA2N15Q8

Spec. No. C880L3 Issued Date 2012.10.03 CYStech Electronics Corp. Revised Date 2013.10.25 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTEA2N15L3 ID 3A RDSON@VGS=10V, ID=1.6A 125m (typ) RDSON@VGS=5.5V, ID=1A 141m (typ) Description The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast sw... See More ⇒

Detailed specifications: MTE50N15Q8 , MTE65N15FP , MTE65N15J3 , MTE65N20F3 , MTE65N20J3 , MTEA0N10J3 , MTEA0N10Q8 , MTEA2N15L3 , K2611 , MTEA6C15J4 , MTEA6C15Q8 , MTEB4N15J3 , MTEB6N20J3 , MTED6N25J3 , MTED6N25KJ3 , MTEE2N20FP , MTEE2N20J3 .

History: IXFX80N50Q3 | TPC6010-H | TPC8118 | ME7632S | H5N5016PL | 3N325 | VBB1630

Keywords - MTEA2N15Q8 MOSFET specs

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