All MOSFET. MTEB4N15J3 Datasheet

 

MTEB4N15J3 Datasheet and Replacement


   Type Designator: MTEB4N15J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.253 Ohm
   Package: TO-252
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MTEB4N15J3 Datasheet (PDF)

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MTEB4N15J3

Spec. No. : C874J3 Issued Date : 2013.02.20 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150VMTEB4N15J3 ID 6A253m VGS=10V, ID=3A RDSON(TYP) 265m VGS=6V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Out

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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