MTEB4N15J3 Specs and Replacement

Type Designator: MTEB4N15J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.253 Ohm

Package: TO-252

MTEB4N15J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTEB4N15J3 datasheet

 ..1. Size:311K  cystek
 mteb4n15j3.pdf pdf_icon

MTEB4N15J3

Spec. No. C874J3 Issued Date 2013.02.20 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTEB4N15J3 ID 6A 253m VGS=10V, ID=3A RDSON(TYP) 265m VGS=6V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Out... See More ⇒

Detailed specifications: MTE65N20F3, MTE65N20J3, MTEA0N10J3, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MMIS60R580P, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, MTEF1P15N6, MTEF1P15Q8

Keywords - MTEB4N15J3 MOSFET specs

 MTEB4N15J3 cross reference

 MTEB4N15J3 equivalent finder

 MTEB4N15J3 pdf lookup

 MTEB4N15J3 substitution

 MTEB4N15J3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs