MTEB6N20J3 Specs and Replacement

Type Designator: MTEB6N20J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-252

MTEB6N20J3 substitution

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MTEB6N20J3 datasheet

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 mteb6n20j3.pdf pdf_icon

MTEB6N20J3

Spec. No. C875J3 Issued Date 2012.12.12 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTEB6N20J3 ID 8.3A RDS(ON)@VGS=10V, ID=3A 300m (typ) RDS(ON)@VGS=6V, ID=2A 306m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent... See More ⇒

Detailed specifications: MTE65N20J3, MTEA0N10J3, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, AOD4184A, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, MTEF1P15N6, MTEF1P15Q8, MTEF1P15V8

Keywords - MTEB6N20J3 MOSFET specs

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